6MBI100FA-060 FUJI IGBT Module
Part Number: 6MBI100FA-060
Make: FUJI
Part Condition: New
Description: high-power, high-efficiency Insulated Gate Bipolar Transistor (IGBT) module manufactured by Fuji Electric.
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Part Number: 6MBI100FA-060
Make: FUJI
Part Condition: New
Description: high-power, high-efficiency Insulated Gate Bipolar Transistor (IGBT) module manufactured by Fuji Electric.
Part Number: 6MBI300U4-120 Make: Fuji Part Condition: Brand New Description: IGBT Module Voltage: 1200V Current: 300A Power: 1385W Temperature: -40 to +125
Part Number: DDB6U205N16L Make: Infineon Part Condition: Brand New Description: a high-power rectifier diode module from Infineon Technologies, designed for industrial applications requiring robust current handling and high voltage blocking capability.
Part Number: SKKT92B/16E Make: Semikron Part Condition: Brand New Description: IGBT Modules Voltage: 1600V Current: 95A SCR Module Type: Series Connected – SCRs Net unit weight: 0.095 kg
Part Number: BSM35GP120 Make: Infineon Technologies Part Condition: Brand New Description: IGBT Module Voltage:1200V Rated Current: 35A Operating Temperature: -40°C Net Weight: 180g
Part Number: SKKH107/16E Make: Semikron Part Condition: Brand New Description: IGBT Module Voltage: 1600V Rated Current: 119A Operating Temperature: 130°C Number of Pins: 5pins