6MBI100FA-060 FUJI IGBT Module
Part Number: 6MBI100FA-060
Make: FUJI
Part Condition: New
Description: high-power, high-efficiency Insulated Gate Bipolar Transistor (IGBT) module manufactured by Fuji Electric.
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Part Number: 6MBI100FA-060
Make: FUJI
Part Condition: New
Description: high-power, high-efficiency Insulated Gate Bipolar Transistor (IGBT) module manufactured by Fuji Electric.
Part Number: SKM195GB066D Make: Semikron Part Condition: Brand New Description: a SEMITRANS® 2 IGBT half-bridge module rated at 195 A and 600 V. It is designed for medium-power inverter applications such as motor drives, UPS systems, and renewable energy converters.
Part Number: BSM50GD120DN2E3226 Make: Infineon Technologies Part Condition: Brand New Description: IGBT Module Voltage: 1200V Current: 50A Power Dissipation: 350W Mounting Style: Chassis Mount
Part Number: BSM25GD120DN2 Make: Infineon Technologies Part Condition: Brand New Description: IGBT Module Power Supply Voltage: 1200V Current: 25A Power: 200W Temperature: -40°C Net Weight: 180g
Part Number: SKD82/16 Make: Semikron Part Condition: Brand New Description: IGBT Module Rated Voltage: 1600V Rated Current: 80A Number of Phases: 3 Number of Pins: 5Pins Operating Temperature: 150°C Diode Mounting: Panel
Part Number: DDB6U205N16L Make: Infineon Part Condition: Brand New Description: a high-power rectifier diode module from Infineon Technologies, designed for industrial applications requiring robust current handling and high voltage blocking capability.