2MBI600NT060 FUJI Dual IGBT Module
Part Number: 2MBI600NT060
Make: FUJI
Part Condition: New
Description: legacy, high-current dual IGBT (Insulated Gate Bipolar Transistor) power module developed by Fuji Electric
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Part Number: 2MBI600NT060
Make: FUJI
Part Condition: New
Description: legacy, high-current dual IGBT (Insulated Gate Bipolar Transistor) power module developed by Fuji Electric
Part Number: BSM50GD120DN2E3226 Make: Infineon Technologies Part Condition: Brand New Description: IGBT Module Voltage: 1200V Current: 50A Power Dissipation: 350W Mounting Style: Chassis Mount
Part Number: SKKD162/16 Make: Semikron Part Condition: Brand New Description: IGBT Module Rated Voltage: 1600V Rated Current: 195A Number of Pins: 3Pins Operating Temperature: 135°C Diode Mounting: Panel Net weight: 0.165 kg
Part Number: 6MBI300U4-120 Make: Fuji Part Condition: Brand New Description: IGBT Module Voltage: 1200V Current: 300A Power: 1385W Temperature: -40 to +125
Part Number: DDB6U205N16L Make: Infineon Part Condition: Brand New Description: a high-power rectifier diode module from Infineon Technologies, designed for industrial applications requiring robust current handling and high voltage blocking capability.
Part Number: BSM35GP120 Make: Infineon Technologies Part Condition: Brand New Description: IGBT Module Voltage:1200V Rated Current: 35A Operating Temperature: -40°C Net Weight: 180g