2MBI600NT060 FUJI Dual IGBT Module
Part Number: 2MBI600NT060
Make: FUJI
Part Condition: New
Description: legacy, high-current dual IGBT (Insulated Gate Bipolar Transistor) power module developed by Fuji Electric
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Part Number: 2MBI600NT060
Make: FUJI
Part Condition: New
Description: legacy, high-current dual IGBT (Insulated Gate Bipolar Transistor) power module developed by Fuji Electric
Part Number: SKM195GB066D Make: Semikron Part Condition: Brand New Description: a SEMITRANS® 2 IGBT half-bridge module rated at 195 A and 600 V. It is designed for medium-power inverter applications such as motor drives, UPS systems, and renewable energy converters.
Part Number: DDB6U205N16L Make: Infineon Part Condition: Brand New Description: a high-power rectifier diode module from Infineon Technologies, designed for industrial applications requiring robust current handling and high voltage blocking capability.
Part Number: BSM50GD120DN2E3226 Make: Infineon Technologies Part Condition: Brand New Description: IGBT Module Voltage: 1200V Current: 50A Power Dissipation: 350W Mounting Style: Chassis Mount
Part Number: SKKT92B/16E Make: Semikron Part Condition: Brand New Description: IGBT Modules Voltage: 1600V Current: 95A SCR Module Type: Series Connected – SCRs Net unit weight: 0.095 kg