2MBI600NT060 FUJI Dual IGBT Module
Part Number: 2MBI600NT060
Make: FUJI
Part Condition: New
Description: legacy, high-current dual IGBT (Insulated Gate Bipolar Transistor) power module developed by Fuji Electric
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Part Number: 2MBI600NT060
Make: FUJI
Part Condition: New
Description: legacy, high-current dual IGBT (Insulated Gate Bipolar Transistor) power module developed by Fuji Electric
Part Number: BSM35GP120 Make: Infineon Technologies Part Condition: Brand New Description: IGBT Module Voltage:1200V Rated Current: 35A Operating Temperature: -40°C Net Weight: 180g
Part Number: SKKT570/18E Make: SEMIKRON Part Condition: Brand New Description: IGBT Module Voltage: 1800V Current: 570A
Part Number: FF450R12KE4 Make: Infineon Part Condition: Brand New Description: IGBT Module Power Supply Voltage:1200V Current: 450A Operating temperature: 150 °C
Part Number: DDB6U205N16L Make: Infineon Part Condition: Brand New Description: a high-power rectifier diode module from Infineon Technologies, designed for industrial applications requiring robust current handling and high voltage blocking capability.
Part Number: SKM195GB066D Make: Semikron Part Condition: Brand New Description: a SEMITRANS® 2 IGBT half-bridge module rated at 195 A and 600 V. It is designed for medium-power inverter applications such as motor drives, UPS systems, and renewable energy converters.